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| VN30N HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE VN30N s V DSS 60 V R DS( on) 0.03 I OUT 45 A VC C 26 V s s s s s OUTPUT CURRENT (CONTINUOUS): 45A @ Tc=25 oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER DISSIPATION PENTAWATT (vertical) PENTAWATT (horizontal) DESCRIPTION The VN30N is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status. BLOCK DIAGRAM PENTAWATT (in-line) ORDER CODES: PENTAWATT vertical VN30N PENTAWATT horizontal VN30N (011Y) PENTAWATT in-line VN30N (012Y) September 1994 1/10 VN30N ABSOLUTE MAXIMUM RATING Symbol V( BR)DSS IO UT IR II N -V CC ISTA T VE SD P tot Tj T stg Parameter Drain-Source Breakdown Voltage Output Current (cont.) Reverse Output Current Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k, 100 pF) Power Dissipation at T c 25 C Junction Operating Temperature Storage Temperature o Value 60 45 -45 10 -4 10 2000 108 -40 to 150 -55 to 150 Unit V A A mA V mA V W o o C C CONNECTION DIAGRAM CURRENT AND VOLTAGE CONVENTIONS 2/10 VN30N THERMAL DATA R thj-cas e Rthj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.15 60 o o C/W C/W ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 Tj 125 oC unless otherwise specified) POWER Symbol VC C R on IS Parameter Supply Voltage On State Resistance Supply Current I OU T = 18 A I OU T = 18 A Off State On State T j = 25 o C T j 25 oC Test Conditions Min. 7 Typ. Max. 26 0.06 0.03 50 15 Unit V A mA SWITCHING Symbol t d(on) tr t d(off ) tf (di/dt) on (di/dt) off Parameter Test Conditions Min. Typ. 30 100 80 40 0.5 3 3 4 Max. Unit s s s s A/s A/s A/s A/s Turn-on Delay Time Of I OU T = 18 A Resistive Load Output Current Input Rise Time < 0.1 s T j = 25 o C Rise Time Of Output Current I OU T = 18 A Resistive Load Input Rise Time < 0.1 s T j = 25 o C Turn-off Delay Time Of I OU T = 18 A Resistive Load Output Current Input Rise Time < 0.1 s T j = 25 o C Fall Time Of Output Current Turn-on Current Slope Turn-off Current Slope I OU T = 18 A Resistive Load Input Rise Time < 0.1 s T j = 25 o C I OU T = 18 A I OU T = I OV I OU T = 18 A I OU T = I OV LOGIC INPUT Symbol V IL V IH V I(hy st.) II N V ICL Parameter Input Low Level Voltage Input High Level Voltage Input Hysteresis Voltage Input Current Input Clamp Voltage V IN = 5 V I IN = 10 mA I IN = -10 mA 2 0.5 250 6 -0.7 500 Test Conditions Min. Typ. Max. 0.8 (*) Unit V V V A V V PROTECTIONS AND DIAGNOSTICS Symbol Parameter Test Conditions I STAT = 1.6 mA 6.5 Min. Typ. Max. 0.4 7 Unit V V V STAT (*) Status Voltage Output Low V US D Under Voltage Shut Down 3/10 VN30N ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (continued) Symbol V S CL (*) tS C Parameter Status Clamp Voltage Switch-off Time in Short Circuit Condition at Start-Up Over Current Average Current in Short Circuit Open Load Current Level Thermal Shut-down Temperature Reset Temperature Test Conditions I STAT = 10 mA I STAT = -10 mA R LOA D < 10 m Tc = 25 o C Min. Typ. 6 -0.7 1 Max. Unit V V ms I OV I AV I OL TTS D TR R LOA D < 10 m R LOA D < 10 m -40 T c 125 o C Tc = 85 o C 5 140 125 140 2.5 1250 A A mA o C C o (*) The V IH is internally cl amped at 6V about. It is possibl e to connect this pin to an higher voltage via an external resi stor cal culated to not exceed 10 mA at the i nput pin. (*) Status determination > 100 s after the switching edge. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125 oC the switch is automatically turned on again. In short circuit conditions the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL, VIH thresholds and VSTAT are increased by VF with respect to power GND). - The undervoltage shutdown level is increased by VF . If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 4), which becomes the common signal GND for the whole control board. In this way no shift of VIH, V IL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. 4/10 VN30N TRUTH TABLE INPUT Normal Operation Open Circuit (No Load) Over-temperature Under-voltage L H H H X OUTPUT L H H L L DIAGNOSTIC H H L L H Figure 1: Waveforms Figure 2: Over Current Test Circuit 5/10 VN30N Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 6/10 VN30N Pentawatt (vertical) MECHANICAL DATA DIM. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia mm TYP. inch TYP. MIN. 2.4 1.2 0.35 0.8 1 3.2 6.6 10.05 3.4 6.8 MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 3.6 7 10.4 10.4 MIN. 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.396 0.134 0.268 MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409 17.85 15.75 21.4 22.5 2.6 15.1 6 4.5 4 3.65 3.85 0.144 3 15.8 6.6 0.102 0.594 0.236 0.703 0.620 0.843 0.886 0.118 0.622 0.260 0.177 0.157 0.152 L E L1 A C D1 L2 L5 L3 D H3 Dia. F H2 L7 L6 F1 G G1 M M1 P010E 7/10 VN30N Pentawatt (horizontal) MECHANICAL DATA DIM. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 Dia 10.05 14.2 5.7 14.6 3.5 2.6 15.1 6 3.65 2.4 1.2 0.35 0.8 1 3.2 6.6 3.4 6.8 mm MIN. TYP. MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 3.6 7 10.4 10.4 15 6.2 15.2 4.1 3 15.8 6.6 3.85 0.137 0.102 0.594 0.236 0.144 0.396 0.559 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.134 0.268 MIN. inch TYP. MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409 0.590 0244 0.598 0.161 0.118 0.622 0.260 0.152 P010F 8/10 VN30N Pentawatt (In- Line) MECHANICAL DATA DIM. MIN. A C D D1 E F F1 G G1 H2 H3 L2 L3 L5 L6 L7 Dia 10.05 23.05 25.3 2.6 15.1 6 3.65 23.4 25.65 2.4 1.2 0.35 0.8 1 3.2 6.6 3.4 6.8 mm TYP. MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 3.6 7 10.4 10.4 23.8 26.1 3 15.8 6.6 3.85 0.396 0.907 0.996 0.102 0.594 0.236 0.144 0.921 1.010 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.134 0.268 MIN. inch TYP. MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409 0.937 1.028 0.118 0.622 0.260 0.152 P010D 9/10 VN30N Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 10/10 |
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